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Typical Characteristics (Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
1.2
Figure 8. On-Resistance Variation
vs. Temperature
3.0
2.5
1.1
2.0
1.0
1.5
1.0
0.9
* Notes :
1. V GS = 0 V
2. I D = 250 ? A
0.5
* Notes :
1. V GS = 10 V
2. I D = 7 A
T J , Junction Temperature [ C]
T J , Junction Temperature [ C]
0.8
-100
-50
0 50 100
o
150
200
0.0
-100
-50
0 50 100
o
150
200
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current
vs. Case Temperature
10
15
2
10 ? s
100 ? s
10
1
1 ms
10 ms
100 ms
10
10
10
1. T C = 25 C
2. T J = 150 C
0
-1
Operation in This Area
is Limited by R DS(on)
DC
* Notes :
o
o
3. Single Pulse
5
10
10
10
10
-2
0
1
2
0
25
50
75
100
125
150
T C , Case Temperature [ C]
V DS , Drain-Source Voltage [V]
o
Figure 11. Transient Thermal Response Curve
P DM
10
t 1
0
t 2
D = 0 .5
0 .2
P DM
10
-1
0 .1
0 .0 5
t 1
t 2
0 .0 2
1 . Z ? J C ( t) = 0 .8 9
C /W M a x .
10
-2
0 .0 1
s in g le p u ls e
* N o te s :
o
2 . D u ty F a c to r , D = t 1 /t 2
3 . T J M - T C = P D M * Z ? J C ( t)
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t 1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
?2007 Fairchild Semiconductor Corporation
FDB14N30 Rev. C1
4
www.fairchildsemi.com
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